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YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies

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YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies

Pd - Power Dissipation : 1.76kW

Td(off) : 376ns

Operating Temperature : -40℃~+150℃

Td(on) : 162ns

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Reverse Transfer Capacitance (Cres) : 0.45nF

Input Capacitance(Cies) : 12.6nF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5V@6mA

Gate Charge(Qg) : 590nC@15V

Reverse Recovery Time(trr) : 198ns

Switching Energy(Eoff) : 22.9mJ

Turn-On Energy (Eon) : 13.6mJ

Description : 1.76kW 1.2kV Screw Terminals Single IGBTs RoHS

Mfr. Part # : MG400HF12MIC2

Model Number : MG400HF12MIC2

Package : Screw Terminals

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Product Overview

The MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast switching speeds and a short tail current, complemented by free-wheeling diodes with fast and soft reverse recovery. Ideal for welding machines, power supplies, and other industrial power applications.

Product Attributes

Brand: Yangjie
Model: MG400HF12MIC2
Certifications: RoHS Compliant
Origin: China (implied by website)

Technical Specifications

Description	Symbol	Values	Units	Conditions
Absolute Maximum Ratings	VCES	1200	V	Collector - Emitter Voltage
	VGES	±20	V	Gate-Emitter Voltage
	IC (TC=25)	450	A	DC Collector Current
	IC (TC=80)	300	A	DC Collector Current
	ICM (tp=1ms)	600	A	Repetitive Peak Collector Current TC=25C
	Ptot	1760	W	Power Dissipation Per IGBT
	TJ	-40 to +150	°C	Junction Temperature Range
	TSTG	-40 to +125	°C	Storage Temperature Range
	Viso	3000	V	Insulation Test Voltage AC, t=1min
Electrical Characteristics of IGBT	V(BR)CES	1200	V	Collector-Emitter Breakdown Voltage VGE=0V, IC=1mA
	ICES (TJ=25°C)	0.5	mA	Collector Leakage Current VCE=1200V,VGE=0V
	ICES (TJ=125°C)	1	mA	Collector Leakage Current VCE=1200V, VGE=0V
	IGES	-200 to 200	nA	Gate Leakage Current VCE=0V, VGE=±20V
	VGE(th)	5 to 7	V	Gate - Emitter Threshold Voltage VCE=VGE, IC=6mA
	VCE(sat) (TJ=25°C)	1.8 to 2.0	V	Collector Emitter Saturation Voltage IC=300A, VGE=15V
	VCE(sat) (TJ=125°C)	2.0 to 2.3	V	Collector Emitter Saturation Voltage IC=300A VGE=15V
	Cies	12.6	nF	Input Capacitance VCE=25V, VGE=0V, f =1MHz
	Cres	0.45	nF	Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz
	SCSOA	1700	A	Short Circuit Safe Operating Area VCC=600V, VGE≤15V, TJ=125°C, 10 μs
Switching Characteristics (IGBT)	td(on) (TJ=25°C)	162	ns	Turn-on Delay Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load
	tr (TJ=25°C)	53	ns	Rise Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load
	td(off) (TJ=25°C)	376	ns	Turn-off Delay Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load
	Tf (TJ=25°C)	133	ns	Fall Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load
	td(on) (TJ=125°C)	180	ns	Turn-on Delay Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load
	tr (TJ=125°C)	56	ns	Rise Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load
	td(off) (TJ=125°C)	429	ns	Turn-off Delay Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load
	Tf (TJ=125°C)	292	ns	Fall Time VCC=600V, IC=300A RG =3.5Ω,VGE=±15V Inductive Load
Switching Loss (IGBT)	Eon (TJ=25°C)	13.6	mJ	Turn-on Switching Loss VCC=600V, RG =3.5Ω IC=300A
	Eon (TJ=125°C)	19.2	mJ	Turn-on Switching Loss VCC=600V, RG =3.5Ω IC=300A
	Eoff (TJ=25°C)	22.9	mJ	Turn-off Switching Loss VCC=600V, RG =3.5Ω IC=300A
	Eoff (TJ=125°C)	33.8	mJ	Turn-off Switching Loss VCC=600V, RG =3.5Ω IC=300A
Electrical Characteristics of FWD	VFM (TJ=25°C)	1.81 to 2.0	V	Forward Voltage IF=300A, VGE=0V
	VFM (TJ=125°C)	1.95 to 2.3	V	Forward Voltage IF=300A, VGE=0V
	trr (TJ=25°C)	198	ns	Reverse Recovery Time IF=300A , VR=600V, diF/dt=-2885A/μs VGE = -15V
	trr (TJ=125°C)	365	ns	Reverse Recovery Time IF=300A , VR=600V, diF/dt=-2885A/μs VGE = -15V
Dynamic Characteristics (FWD)	Irr (TJ=25°C)	185	A	Peak Reverse Recovery Current TJ=25°C, IF=300A , VR=600V, diF/dt=-2885A/μs VGE = -15V
Dynamic Characteristics (FWD)	Qrr (TJ=25°C)	15.9	mJ	Reverse Recovery Charge TJ=25°C, IF=300A , VR=600V, diF/dt=-2885A/μs VGE = -15V
Thermal Resistance	RθJC (IGBT)	0.07	°C/W	Junction-To-Case (IGBT Part, Per Leg)
Thermal Resistance	RθJC (Diode)	0.17	°C/W	Junction-To-Case (Diode Part, Per Leg)
RθCS	0.1	°C/W	Case-To-Sink (Conductive Grease Applied)
Mounting Torque	Power Terminals	5 ±15%	N*m	Screw: M6
Mounting Torque	Mounting Screw	5 ±15%	N*m	Screw: M6
Weight		300	g	Weight Of Module

2410121308_YANGJIE-MG400HF12MIC2_C781194.pdf

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