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EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode

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EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode

Pd - Power Dissipation : 4.05kW

Td(off) : 480ns

Td(on) : 160ns

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Reverse Transfer Capacitance (Cres) : 2.05nF

Input Capacitance(Cies) : 37nF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5.2V@23mA

Gate Charge(Qg) : 4.4uC

Operating Temperature : -40℃~+150℃

Pulsed Current- Forward(Ifm) : 1200A

Switching Energy(Eoff) : 47mJ

Turn-On Energy (Eon) : 62.5mJ

Description : 4.05kW 1.2kV Screw Terminals Single IGBTs RoHS

Mfr. Part # : FF600R12ME4

Model Number : FF600R12ME4

Package : Screw Terminals

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Product Overview

The FF600R12ME4 is an EconoDUAL3 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled Diode with NTC. It offers low VCEsat with a positive temperature coefficient, high power density, and an isolated base plate. Ideal for high power converters, motor drives, servo drives, UPS systems, and wind turbines.

Product Attributes

  • Brand: Infineon (implied by module type and datasheet format)
  • Model: FF600R12ME4
  • Module Type: EconoDUAL3
  • IGBT Technology: Trench/Fieldstop IGBT4
  • Diode Type: Emitter Controlled Diode
  • Integrated Component: NTC Thermistor

Technical Specifications

ParameterUnitValueNotes
VCESV1200Collector-emitter voltage
IC nomA600Continuous DC collector current @ TC = 100C, Tvj max = 175C
ICRMA1200Repetitive peak collector current (tP = 1 ms)
PtotW4050Total power dissipation @ TC = 25C, Tvj max = 175C
VGESV+/-20Gate-emitter peak voltage
VCEsatV1.75 - 2.10Collector-emitter saturation voltage @ IC = 600 A, VGE = 15 V (Tvj = 25C to 150C)
VGEthV5.2 - 6.4Gate threshold voltage @ IC = 23.0 mA, VCE = VGE, Tvj = 25C
QGC4.40Gate charge @ VGE = -15 V ... +15 V
RGint1.2Internal gate resistor @ Tvj = 25C
CiesnF37.0Input capacitance @ f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
CresnF2.05Reverse transfer capacitance @ f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
ICESmA3.0Collector-emitter cut-off current @ VCE = 1200 V, VGE = 0 V, Tvj = 25C
IGESnA400Gate-emitter leakage current @ VCE = 0 V, VGE = 20 V, Tvj = 25C
td ons0.16 - 0.21Turn-on delay time, inductive load @ IC = 600 A, VCE = 600 V, VGE = 15 V, RGon = 1.5 (Tvj = 25C to 150C)
trs0.09 - 0.10Rise time, inductive load @ IC = 600 A, VCE = 600 V, VGE = 15 V, RGon = 1.5 (Tvj = 25C to 150C)
td offs0.48 - 0.65Turn-off delay time, inductive load @ IC = 600 A, VCE = 600 V, VGE = 15 V, RGoff = 1.5 (Tvj = 25C to 150C)
tfs0.07 - 0.12Fall time, inductive load @ IC = 600 A, VCE = 600 V, VGE = 15 V, RGoff = 1.5 (Tvj = 25C to 150C)
EonmJ62.5 - 90.0Turn-on energy loss per pulse @ IC = 600 A, VCE = 600 V, LS = 35 nH, VGE = 15 V, di/dt = 5100 A/s (Tvj = 25C to 150C)
EoffmJ47.0 - 79.5Turn-off energy loss per pulse @ IC = 600 A, VCE = 600 V, LS = 35 nH, VGE = 15 V, du/dt = 3700 V/s (Tvj = 25C to 150C)
ISCA2400Short circuit data @ VGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s
RthJC (IGBT)K/W0.037Thermal resistance, junction to case per IGBT
RthCH (IGBT)K/W0.035Thermal resistance, case to heatsink per IGBT (Paste = 1 W/(mK))
Tvj opC-40 to 150Temperature in switching operation
VRRMV1200Repetitive peak reverse voltage (Diode)
IFA600Continuous DC forward current (Diode)
IFRMA1200Repetitive peak forward current (Diode, tP = 1 ms)
ItAs37500 - 40000Limit load integral (Diode, tP = 10 ms, Tvj = 125C to 150C)
VFV1.65 - 2.10Forward voltage @ IF = 600 A, VGE = 0 V (Tvj = 25C to 150C)
IRMA290 - 450Peak reverse recovery current @ IF = 600 A, -diF/dt = 5100 A/s (Tvj = 25C to 150C)
QrC62.0 - 130Recovered charge @ IF = 600 A, -diF/dt = 5100 A/s (Tvj = 25C to 150C)
ErecmJ22.0 - 51.0Reverse recovery energy @ IF = 600 A, -diF/dt = 5100 A/s (Tvj = 25C to 150C)
RthJC (Diode)K/W0.065Thermal resistance, junction to case per diode
RthCH (Diode)K/W0.039Thermal resistance, case to heatsink per diode (Paste = 1 W/(mK))
R25k5.00NTC Rated resistance @ TC = 25C
R/R%-5 to 5NTC Deviation of R100 @ TC = 100C
P25mW20.0NTC Power dissipation @ TC = 25C
B25/50K3375NTC B-value
B25/80K3411NTC B-value
B25/100K3433NTC B-value
VISOLkV2.5Isolation test voltage RMS, f = 50 Hz, t = 1 min
Material (Baseplate)CuMaterial of module baseplate
Internal isolationAl2O3Basic insulation (class 1, IEC 61140)
Creepage distance (terminal to heatsink)mm14.5
Creepage distance (terminal to terminal)mm13.0
Clearance (terminal to heatsink)mm12.5
Clearance (terminal to terminal)mm10.0
CTI> 200Comparative tracking index
RthCH (Module)K/W0.009Thermal resistance, case to heatsink per module (Paste = 1 W/(mK))
LsCEnH20Module stray inductance
RCC'+EE'm1.00Module lead resistance, terminals - chip per switch @ TC = 25C
TstgC-40 to 125Storage temperature
Mounting torque (Module M5)Nm3.00 - 6.00Mounting torque for module mounting
Terminal connection torque (Screw M6)Nm3.0 - 6.0Terminal connection torque
Weightg345

2410121850_Infineon-FF600R12ME4_C541106.pdf


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