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High current 2A NPN transistor DIODES FZT653TA with 100V breakdown voltage and low saturation voltage

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High current 2A NPN transistor DIODES FZT653TA with 100V breakdown voltage and low saturation voltage

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 10uA

Pd - Power Dissipation : 3W

Transition frequency(fT) : 175MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 2A

Collector - Emitter Voltage VCEO : 100V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 100V 2A 175MHz 3W Surface Mount SOT-223

Mfr. Part # : FZT653TA

Model Number : FZT653TA

Package : SOT-223

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Product Overview

The FZT653 is a 100V NPN high-performance transistor in a SOT223 package. It offers a high continuous current of 2A and a peak pulse current of 6A, with a low saturation voltage of less than 300mV @ 1A. This device is lead-free, RoHS compliant, and halogen/antimony-free, making it a "Green" device. It is qualified to AEC-Q101 standards for high reliability, with an automotive-compliant version available under a separate datasheet (FZT653Q).

Product Attributes

Brand: Diodes Incorporated
Package: SOT223
Material: Molded Plastic ("Green" Molding Compound)
Certifications: RoHS Compliant, AEC-Q101 Qualified, Halogen and Antimony Free ("Green" Device)
Complementary PNP Type: FZT753
Automotive Version: FZT653Q (Available under separate datasheet)

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Collector-Base Breakdown Voltage	BVCBO	120	V	IC = 100A
Collector-Emitter Breakdown Voltage	BVCBO	100	V	IC = 10mA
Emitter-Base Breakdown Voltage	BVEBO	7	V	IE = 100A
Collector Cut-Off Current	ICBO	< 1	nA	VCB = 100V
Emitter Cut-Off Current	IEBO	< 1	nA	VEB = 5.6V
Collector-Emitter Saturation Voltage	VCE(SAT)	< 0.3	V	IC = 1A, IB = 100mA
Collector-Emitter Saturation Voltage	VCE(SAT)	< 0.5	V	IC = 2A, IB = 200mA
Base-Emitter Saturation Voltage	VBE(SAT)	1.25	V	IC = 1A, IB = 100mA
Base-Emitter Turn-On Voltage	VBE(ON)	1.0	V	IC = 1A, VCE = 2V
DC Current Gain	hFE	70 - 200	-	IC = 50mA, VCE = 2V
DC Current Gain	hFE	100 - 300	-	IC = 500mA, VCE = 2V
DC Current Gain	hFE	55 - 110	-	IC = 1A, VCE = 2V
DC Current Gain	hFE	25 - 55	-	IC = 2A, VCE = 2V
Current Gain-Bandwidth Product	fT	140 - 175	MHz	VCE = 5V, IC = 100mA, f = 100MHz
Switching Times (Turn-On)	tON	80	ns	IC = 500mA, VCC = 10V, IB1 = -IB2 = 50mA
Switching Times (Turn-Off)	tOFF	1200	ns	IC = 500mA, VCC = 10V, IB1 = -IB2 = 50mA
Output Capacitance	COBO	30	pF	VCB = 10V, f = 1MHz
Continuous Collector Current	IC	2	A
Peak Pulse Current	ICM	6	A
Power Dissipation (Note 5)	PD	3	W
Thermal Resistance, Junction to Ambient (Note 5)	RJA	41.7	C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Electrostatic Discharge - Human Body Model	ESD HBM	4000	V	JEDEC Class 3A
Electrostatic Discharge - Machine Model	ESD MM	400	V

2412251006_DIODES-FZT653TA_C155223.pdf

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