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PNP transistor GOODWORK A1015 with 50 volt collector emitter voltage and ER RoHS 2002 95 EC certification

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PNP transistor GOODWORK A1015 with 50 volt collector emitter voltage and ER RoHS 2002 95 EC certification

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 150MHz

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 150mA

Collector - Emitter Voltage VCEO : 50V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 50V 150mA 150MHz 200mW Surface Mount SOT-23

Mfr. Part # : A1015

Model Number : A1015

Package : SOT-23

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Product Overview

The A1015 is a PNP epitaxial silicon planar design general-purpose switching transistor. It features a collector-emitter voltage of -50V and a collector current of -0.15A. Designed for various switching applications, this transistor complies with ER RoHS 2002/95/EC directives and offers a transition frequency greater than 80MHz.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: PNP epitaxial silicon, planar design
Color: Not specified
Certifications: ER RoHS 2002/95/EC

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Collector-Base Voltage	VCBO				-50	V
Collector-Emitter Voltage	VCEO				-50	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				-0.15	A
Total Device Dissipation (FR-5 BOARD)	PD				0.2	W
Thermal Resistance Junction to Ambient	RJA			625		OC/W
Junction Temperature	TJ				150	OC
Storage Temperature	TSTG		-55		+150	OC
Collector-Base breakdown voltage	V(BR)CBO	IC=-100uA,IE=0	-50			V
Collector-Emitter breakdown voltage	V(BR)CEO	IC=-0.1mA,IB=0	-50			V
Emitter-Base breakdown voltage	V(BR)EBO	IE=-100uA,IC=0	-5			V
Collector cut-off current	ICBO	VCB=-50V,IC=0			-0.1	uA
Collector cut-off current	ICEX				-0.1	uA
Base cut-off current	IBEX				-0.1	uA
Emitter cut-off current	IEBO	VEB=-5V,IC=0			-0.1	uA
DC current gain	HFE	IC=-2mA,VCE=-6V	130		400
DC current gain	HFE	IC=-10mA,IB=-1mA		100
DC current gain	HFE	IC=-100mA,IB=-10mA		100
Collector-Emitter saturation voltage	VCE(SAT)	IC=-10mA,IB=-1mA		-0.2		V
Collector-Emitter saturation voltage	VCE(SAT)	IC=-100mA,IB=-10mA		-0.3		V
Base-Emitter Saturation voltage	VBE(SAT)	IC=-10mA,IB=-1mA		-0.85		V
Base-Emitter Saturation voltage	VBE(SAT)	IC=-100mA,IB=-10mA		-0.95		V
Input capacitance	CIB	VCB=-5V,IE=0,f=1MHZ		4.0		pF
Output capacitance	COB	VEB=-0.5V,IC=0,f=1MHZ		8.0		pF
Transition frequency	fT	IC=-1mA,VCE=-10V, f=30MHZ		150		MHZ
Delay time	td	VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA		35		nS
Rise time	tr	VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA		35		nS
Storage time	ts	VCC=-3V,VBE=0.5V, IB1=IB2=-1mA		200		nS
Fall time	tf	VCE=-25V,IB=0		50		nS

2410122011_GOODWORK-A1015_C909753.pdf

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